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FGPF50N33BT 330V, 50A PDP Trench IGBT
April 2009
FGPF50N33BT
330V, 50A PDP IGBT
Features
* High current capability * Low saturation voltage: VCE(sat) =1.6V @ IC = 50A * High input impedance * Fast switching
tm
General Description
Using Novel Trench IGBT Technology, Fairchild's new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
Applications
* PDP System
GC E
TO-220F
Absolute Maximum Ratings
Symbol
VCES VGES IC ICpulse (1)* ICpulse (2)* PD TJ Tstg TL
Description
Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Pulsed Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds @ TC = 25oC
Ratings
330 30 50 120 160 43 17.2 -55 to +150 -55 to +150 300
Units
V V A A A W W
o o o
@ TC = 25oC @ TC = 25oC @ TC = 25 C @ TC = 100 C
o o
C C C
Thermal Characteristics
Symbol
RJC(IGBT) RJA
Parameter
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Typ.
-
Max.
2.9 62.5
Units
o o
C/W C/W
Notes: 1: Repetitive test , Pulse width=100usec , Duty=0.1 2: Half Sine Wave, D < 0.01, pluse width < 10usec *Ic_pluse limited by max Tj
(c)2009 Fairchild Semiconductor Corporation
1
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FGPF50N33BT Rev. A
FGPF50N33BT 330V, 50A PDP Trench IGBT
Package Marking and Ordering Information
Device Marking
FGPF50N33BT
Device
FGPF50N33BTTU
Package
TO-220F
Eco Status
RoHS
Packaging Type
Tube
Qty per Tube
50ea
For Fairchild's definition of "green" Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.
Electrical Characteristics of the IGBT
Symbol
Off Characteristics BVCES BVCES TJ ICES IGES
TC = 25C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A, Tc=25oC VGE = 0V, IC = 250A, Tc=125oC Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current VGE = 0V, IC = 250A VCE = VCES, VGE = 0V, Tc=25oC VCE = VCES, VGE = 0V, Tc=125oC G-E Leakage Current VGE = VGES, VCE = 0V
330 340 -
0.2 -
20 200 200
V V V/oC A A nA
On Characteristics VGE(th) G-E Threshold Voltage IC = 250A, VCE = VGE IC = 20A, VGE = 15V, IC = 30A, VGE = 15V, VCE(sat) Collector to Emitter Saturation Voltage IC = 50A, VGE = 15V, TC = 25oC IC = 50A, VGE = 15V, TC = 125oC Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 980 70 40 pF pF pF 2.3 3.3 1.2 1.3 1.6 1.7 4.3 1.5 V V V V V
Switching Characteristics td(on) tr td(off) tf td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 200V, IC = 20A, VGE = 15V VCC = 200V, IC = 20A, RG = 5, VGE = 15V, Resistive Load, TC = 125oC VCC = 200V, IC = 20A, RG = 5, VGE = 15V, Resistive Load, TC = 25oC 9 33 32 202 9 37 33 332 35 6 14 ns ns ns ns ns ns ns ns nC nC nC
FGPF50N33BT Rev. A
2
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FGPF50N33BT 330V, 50A PDP Trench IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
160
TC = 25 C
o
Figure 2. Typical Output Characteristics
160
TC = 125 C
o
20V
15V 12V
20V
15V 12V
Collector Current, IC [A]
Collector Current, IC [A]
120
10V
120
80
80
10V
VGE = 8V
40
40
VGE = 8V
0 0.0
1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V]
6.0
0 0.0
1.5 3.0 4.5 Collector-Emitter Voltage, VCE [V]
6.0
Figure 3. Typical Saturation Voltage Characteristics
160
Common Emitter VGE = 15V
Figure 4. Transfer Characteristics
160
Common Emitter VCE = 20V
Collector Current, IC [A]
120
Collector Current, IC [A]
TC = 25 C TC = 125 C
o
o
TC = 25 C
o
120
TC = 125 C
o
80
80
40
40
0 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 5
0 0 3 6 9 12 Gate-Emitter Voltage,VGE [V] 15
Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level
2.0
Collector-Emitter Voltage, VCE [V]
Common Emitter VGE = 15V
Figure 6. Saturation Voltage vs. VGE
20
Collector-Emitter Voltage, VCE [V]
Common Emitter TC = 25 C
o
1.8 1.6 1.4
30A 50A
16
12
8
50A
1.2
IC = 20A
1.0 0.8 25
4
30A IC = 20A
50 75 100 o Case Temperature, TC [ C]
125
0
0
4 8 12 16 Gate-Emitter Voltage, VGE [V]
20
FGPF50N33BT Rev. A
3
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FGPF50N33BT 330V, 50A PDP Trench IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter TC = 125 C
o
Figure 8. Capacitance Characteristics
1500
Cies Common Emitter VGE = 0V, f = 1MHz TC = 25 C
o
Collector-Emitter Voltage, VCE [V]
16
Capacitance [pF]
1000
12
8
30A
Coes
500
4
IC = 20A 50A
Cres
0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20
0 1 10 Collector-Emitter Voltage, VCE [V]
30
Figure 9. Gate charge Characteristics
15
Common Emitter
o
Figure 10. SOA Characteristics
500
10s
Gate-Emitter Voltage, VGE [V]
TC = 25 C
100
Collector Current, Ic [A]
100s
12
VCC = 100V 200V
9
10
6
1
DC
Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature
3
0.1
0 0 10 20 30 Gate Charge, Qg [nC] 40
0.01 0.1
1 10 100 Collector-Emitter Voltage, VCE [V]
400
Figure 11. Turn-on Characteristics vs. Gate Resistance
100
Figure 12. Turn-off Characteristics vs. Gate Resistance
4000
Common Emitter VCC = 200V, VGE = 15V IC = 20A TC = 25 C TC = 125 C
o o
1000
Switching Time [ns]
10
td(on) Common Emitter VCC = 200V, VGE = 15V IC = 20A TC = 25 C TC = 125 C
o o
Switching Time [ns]
tr
tf
100
td(off)
1 0 10 20 30 40 Gate Resistance, RG [] 50
10 0 10 20 30 40 50
Gate Resistance, RG []
FGPF50N33BT Rev. A
4
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FGPF50N33BT 330V, 50A PDP Trench IGBT
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs. Collector Current
200
Common Emitter VGE = 15V, RG = 5
Figure 14. Turn-off Characteristics vs. Collector Current
5000
Common Emitter VGE = 15V, RG = 5
100
Switching Time [ns]
TC = 25 C TC = 125 C
o
o
tr
1000
Switching Time [ns]
TC = 25 C TC = 125 C tf
o
o
100
td(off)
td(on)
10
5 10
20
30
40
50
10 10
20
30
40
50
Collector Current, IC [A]
Collector Current, IC [A]
Figure 15. Switching Loss vs. Gate Resistance
5000
Common Emitter VCC = 200V, VGE = 15V IC = 20A
Figure 16. Switching Loss vs. Collector Current
20000 10000
Common Emitter VGE = 15V, RG = 5 TC = 25 C
o o
Switching Loss [mJ]
TC = 125 C
o
Eoff
Switching Loss [mJ]
1000
TC = 25 C
o
1000
TC = 125 C
Eoff
100
Eon
100
Eon
10
10
0
10
20 30 40 Gate Resistance, RG []
50
1 10
20
30
40
50
Collector Current, IC [A]
Figure 17. Turn off Switching SOA Characteristics
200 100
Collector Current, IC [A]
10
Safe Operating Area
1 1
VGE = 15V, TC = 125 C
o
10
100
500
Collector-Emitter Voltage, VCE [V]
FGPF50N33BT Rev. A
5
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FGPF50N33BT 330V, 50A PDP Trench IGBT
Typical Performance Characteristics
Figure 18.Transient Thermal Impedance of IGBT
0.5
Thermal Response [Zthjc]
1
0.3 0.1 0.05 0.02 0.01
0.1
PDM t1 t2
0.01
single pulse
Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC
1E-3 1E-5
1E-4
1E-3
0.01
0.1
1
10
100
Rectangular Pulse Duration [sec]
FGPF50N33BT Rev. A
6
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FGPF50N33BT 330V, 50A PDP Trench IGBT
Mechanical Dimensions
TO-220F
3.30 0.10
10.16 0.20 (7.00)
o3.18 0.10
2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47
9.75 0.30
0.80 0.10
(3 ) 0
0.35 0.10 2.54TYP [2.54 0.20]
#1 0.50 -0.05 2.54TYP [2.54 0.20]
4.70 0.20
+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
FGPF50N33BT Rev. A
7
15.87 0.20
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Rev. I40
(c) 2008 Fairchild Semiconductor Corporation
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